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NXP Semiconductors
PESD5V0L1BSF
Bidirectional low capacitance ESD protection diode
6. Characteristics
Table 8. Characteristics
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
V RWM
reverse standoff
? 5
-
5
V
voltage
I RM
reverse leakage
V RWM = 5 V
-
1
100
nA
current
V CL
V BR
clamping voltage
breakdown voltage
I PP = 1 A
I PP = 3 A
I R = 1 mA
I R = ? 1 mA
[1][2]
[1][2]
[3]
[3]
-
-
6
? 10
-
-
-
-
11.5
13.5
10
? 6
V
V
V
V
C d
diode capacitance
f = 1 MHz
[4]
V R = 0 V
V R = 2.5 V
V R = 5 V
9
-
-
12
8.9
8
15.4
11.4
10.2
pF
pF
pF
L S
R dyn
series inductance
dynamic resistance
[5]
[6]
-
-
0.05
1
-
-
nH
Ω
[1]
[2]
[3]
[4]
[5]
[6]
Non-repetitive current pulse 8/20 μ s exponentially decaying waveform according to IEC 61000-4-5;
see Figure 1 .
Measured from pin 1 to pin 2.
Breakdown voltage is always symmetrical within the characterized range, which means no difference in
breakdown voltage from pin 1 to pin 2 and vice versa.
This parameter is guaranteed by design.
Calculated from S-parameter values.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t p = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
PESD5V0L1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 February 2011
? NXP B.V. 2011. All rights reserved.
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